PhD student in Materials Science and Engineering at EPFL, Switzerland, with a focus on III-V semiconductor nanostructures for next-generation optoelectronics.
Joined May 2020
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We present a new IR photodetector architecture based on arrays of raised, horizontal InGaAs nanowires. Through modeling we demonstrate strong and tunable absorption, and present a path toward integration on CMOS-compatible Si substrates. @PhotonicsMeetup #POM20ju
